Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring…

High-power chip-on-board lighting substrate — a rugged ceramic alternative to metal-core PCB.

Co-fired tungsten/moly ceramic package with hermetic sealing for semiconductor and aerospace.

AlN submount with TEC-ready metallization for optoelectronic and laser-diode assemblies.