Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

AlN submount with TEC-ready metallization for optoelectronic and laser-diode assemblies.

High-power chip-on-board lighting substrate — a rugged ceramic alternative to metal-core PCB.

Active-metal-brazed silicon nitride engineered for EV traction inverters and severe thermal-cycling.

96% Al₂O₃ with laser-drilled vias and ENIG finish. Fine-feature routing for LED, sensors and…
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