Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

AlN submount with TEC-ready metallization for optoelectronic and laser-diode assemblies.

Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

Screen-printed AgPd resistor pattern for fast, uniform, precision heating elements.

Co-fired tungsten/moly ceramic package with hermetic sealing for semiconductor and aerospace.
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