Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

96% Al₂O₃ with laser-drilled vias and ENIG finish. Fine-feature routing for LED, sensors and…

High-power chip-on-board lighting substrate — a rugged ceramic alternative to metal-core PCB.

Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

Active-metal-brazed silicon nitride engineered for EV traction inverters and severe thermal-cycling.