Representative parts across alumina, AlN and Si₃N₄ with DBC, AMB, DPC and film metallization. Every product is built to your drawing.

Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring…

Sputtered Ti/Cu/Au at ±10 µm line accuracy for microwave, 5G and precision resistor networks.

AlN submount with TEC-ready metallization for optoelectronic and laser-diode assemblies.