Quartz (SiO₂) Substrates & Wafers for Electronics

A quartz substrate is a flat, polished piece of silicon dioxide (SiO₂) used as a carrier or functional element in RF, optical, MEMS, and sensor applications. Fused silica substrates deliver a dielectric constant of 3.75–3.82 at 1 MHz, a dissipation factor below 0.0001, and optical transparency from deep-UV (~180 nm) through near-IR (~2.5 µm). These properties make quartz the go-to substrate when signal integrity, UV transmission, or dimensional stability over temperature matter more than thermal conductivity.

Key Takeaways

Fused Silica vs. Crystalline Quartz: Which Grade Do You Need?

Gold thin-film traces on a quartz substrate for RF microstrip circuits

The term “quartz substrate” covers two fundamentally different materials. Fused silica is amorphous SiO₂ produced by melting high-purity quartz sand or synthesizing from SiCl₄. It is isotropic: dielectric constant, CTE, and optical transmission are the same in every direction. Most RF, photonic, and microfluidic substrates use fused silica.

Crystalline quartz is a single-crystal form with a well-defined lattice. It is anisotropic and piezoelectric. SAW (surface acoustic wave) filters, quartz crystal oscillators, and certain MEMS resonators require specific crystal cuts (AT-cut, ST-cut, Z-cut) because performance depends on orientation relative to the crystal axes. If your application does not exploit the piezoelectric effect or a specific crystal orientation, fused silica is almost always cheaper and easier to source.

Quartz Substrate Properties — Spec Table

Parameter Fused Silica Crystalline Quartz (Z-cut) Unit Condition Source
Dielectric constant (εr) 3.75–3.82 4.52 (∥ c-axis) / 4.64 (⊥ c-axis) — 1 MHz, 25 °C CoorsTek / IEEE Std 176
Loss tangent (tan δ) < 0.0001 ~0.0001 — 1 MHz, 25 °C CoorsTek
Thermal conductivity 1.3–1.5 6.2–10.4 (orientation-dependent) W/m·K 25 °C Heraeus / Kyocera
CTE 0.5–0.55 7.1 (⊥ c) / 13.2 (∥ c) ×10⁻⁶/°C 20–300 °C Heraeus Conamic
Flexural strength 50–70 ~100 MPa ASTM C1161 CoorsTek
Max continuous use temp 1050–1100 ~573 (α→β transition) °C In air Heraeus / general literature
UV cutoff (50% T, 1 mm) ~180 ~150 nm — Heraeus Suprasil
Resistivity > 10¹⁸ > 10¹⁶ Ω·cm 25 °C CoorsTek

Typical values for commercially available material, for comparison only. Confirm against the datasheet for your specific grade.

The standout numbers are the near-zero CTE of fused silica and the extremely low loss tangent. Together they explain why fused silica dominates precision photomask blanks, optical flats, and millimeter-wave test fixtures where phase stability matters.

Where Quartz Substrates Are Used

RF and Microwave Circuits

At frequencies above 10 GHz, substrate loss becomes a primary limiter of filter Q-factor and insertion loss. Fused silica’s tan δ below 0.0001 keeps conductor loss dominant rather than dielectric loss, which is the designer’s goal. Thin-film metallization (Ti/Au, Cr/Au, or Ti/Pt/Au) is sputtered directly onto polished fused silica for microstrip and coplanar waveguide structures. If your design also needs thick-film silver metallization, note that silver paste firing temperatures (850 °C+) are compatible with fused silica but require careful profile control to avoid devitrification.

UV and Optical Applications

Fused silica transmits efficiently down to ~180 nm, making it the standard substrate for UV-C LED packages, excimer laser optics, and fluorescence biosensors. High-purity synthetic grades (e.g., Heraeus Suprasil) push the cutoff even lower. For UV-C LED packaging specifically, aluminum nitride is often chosen for the thermal path while quartz or sapphire serves as the optical window. Compare this with sapphire substrates for electronics, which transmit well above ~200 nm but absorb below that.

MEMS and SAW Devices

Single-crystal quartz is the backbone of SAW filters used in every mobile phone’s RF front end. The piezoelectric coupling coefficient and temperature coefficient of frequency (TCF) depend on the crystal cut. AT-cut quartz, for example, achieves near-zero TCF around 25 °C, which is why it dominates timing references. MEMS pressure sensors and gyroscopes also exploit quartz’s piezoelectric response and mechanical Q-factor.

Photomask Blanks and Semiconductor Tooling

The near-zero CTE of fused silica means a 6″ × 6″ × 0.25″ photomask blank changes less than 0.1 µm across a 10 °C temperature swing. No other commonly available substrate material matches this dimensional stability, which is why every advanced lithography mask is made on synthetic fused silica.

Worked Example: Dielectric Loss Comparison at 28 GHz

Consider a 50 Ω microstrip line, 10 mm long, on a 0.25 mm substrate at 28 GHz. The dielectric attenuation per unit length is approximated by:

α_d = (π × f × √εr_eff × tan δ) / c

For fused silica (εr ≈ 3.78, tan δ ≈ 0.0001): α_d ≈ 0.0057 dB/mm → 0.057 dB over 10 mm.

For 96% alumina (εr ≈ 9.6, tan δ ≈ 0.0002): α_d ≈ 0.018 dB/mm → 0.18 dB over 10 mm.

Fused silica delivers roughly 3× lower dielectric loss in this scenario. The actual total loss includes conductor loss, which depends on metallization, but the substrate contribution is significantly smaller on quartz.

Available Sizes and Thicknesses

Alumina, fused silica, and sapphire substrates arranged for visual comparison

Fused silica substrates ship as rectangular coupons (10 × 10 mm up to 150 × 150 mm) and round wafers (2″, 3″, 4″, 6″, 8″ diameter). Thicknesses commonly range from 0.1 mm to 3.0 mm. Consult the ceramic substrate thickness chart for standard stock dimensions. Custom shapes are possible via laser cutting or diamond dicing, though fused silica is more chip-prone than alumina during mechanical processing.

When NOT to Use a Quartz Substrate

Quartz is the wrong material if any of these apply:

Quartz vs. Other Low-Loss Substrates

Parameter Fused Silica Sapphire Rogers RO4003C 96% Alumina
εr (1 MHz) 3.78 9.4–11.6 3.38 9.4–9.6
tan δ (10 GHz) < 0.0001 ~0.00003 0.0027 0.0002
CTE (ppm/°C) 0.55 5.0–6.6 11 7.2
Thermal cond. (W/m·K) 1.4 25–46 0.71 24–28
Max use temp (°C) 1050 1800 250 1600
Relative cost (per cm²) High Very high Moderate Low

Typical values for commercially available material, for comparison only. Confirm against the datasheet for your specific grade.

If you need both low loss and thermal conductivity, sapphire wins but at a steep price premium. Rogers laminates are easier to process with standard PCB tooling but cannot survive temperatures above ~250 °C and have much higher dielectric loss than quartz.

Frequently Asked Questions

Can you metallize a quartz substrate with standard PCB processes?

Not with standard etched-copper PCB processes. Quartz substrates are metallized using thin-film sputtering (Ti/Au, Cr/Au) or thick-film screen printing (Ag, Au). Electroless plating is also possible with proper surface activation. Standard copper-clad lamination does not work because there is no adhesive prepreg system rated for quartz’s CTE.

Is fused silica the same as fused quartz?

They are both amorphous SiO₂ but differ in purity and production method. Fused quartz is made by melting natural quartz sand and retains trace impurities (Al, Na, OH). Fused silica is synthesized from gaseous precursors (SiCl₄) and achieves higher purity, lower UV absorption, and lower fluorescence. For electronics substrates, either grade can work; for UV-C optics below 200 nm, synthetic fused silica is required.

What surface finish can I get on a quartz substrate?

Optical-grade polishing to Ra < 0.5 nm (per interferometric measurement) is standard for photomask blanks and epi-ready wafers. For RF circuits, a fine-ground or polished finish with Ra < 50 nm is typical. Lapped finishes (Ra 0.2–0.8 µm) are available for less critical applications at lower cost.

Does quartz outgas in vacuum?

Fused silica has very low outgassing rates after a moderate bakeout (150 °C, 24 h). Water adsorbed on the surface is the primary volatile; bulk outgassing of SiO₂ is negligible below 800 °C. This makes quartz substrates suitable for vacuum packaging and space-qualified assemblies, per NASA ASTM E595 screening (TML < 1.0%, CVCM < 0.1%).

How does quartz compare to borosilicate glass for RF?

Borosilicate glass (e.g., Schott Borofloat 33) has a loss tangent around 0.0037 at 1 MHz—roughly 37× higher than fused silica. At frequencies above a few GHz, the difference becomes significant. Quartz is the better choice for any circuit where dielectric loss directly affects system performance. For lower-frequency or cost-sensitive sensor substrates, borosilicate may be adequate.

Next Step

If your design calls for a quartz substrate in a specific size, thickness, or with metallization, you can request a custom-shape ceramic substrate quote. To compare quartz against alumina or sapphire side by side with samples in hand, consider ordering a ceramic substrate sample kit.