Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

Aluminum nitride with 0.3 mm direct-bonded copper for IGBT / SiC power modules requiring maximum heat transfer.

Screen-printed AgPd resistor pattern for fast, uniform, precision heating elements.

Active-metal-brazed silicon nitride engineered for EV traction inverters and severe thermal-cycling.

Co-fired tungsten/moly ceramic package with hermetic sealing for semiconductor and aerospace.

High-power chip-on-board lighting substrate — a rugged ceramic alternative to metal-core PCB.